NOT KNOWN FACTS ABOUT GERMANIUM

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled by oxidizing and annealing stages. Due to preferential oxidation of Si around Ge [68], the original Si1–Polycrystalline Ge thin films have captivated appreciable consideration as possible supplies to b